Please use this identifier to cite or link to this item: https://has.hcu.ac.th/jspui/handle/123456789/2054
Title: Improving the Thermoelectric Properties of Thick Sb2Te3 Film via Cu Doping and Annealing Deposited by DC Magnetron Sputtering using a Mosaic Target
Authors: Nattharika Theekhasuk
Rachsak Sakdanuphab
Pilaipon Nuthongkum
Prayoonsak Pluengphon
Adul Harnwunggmoung
Mati Horprathum
Pichet Limsuwan
Aparporn Sakulkalavek
Pisan Sukwisute
ณัฐริกา ทีฆะสุข
ราชศักดิ์ ศักดานุภาพ
พิไลพร หนูทองคํา
ประยูรศักดิ์ เปลื้องผล
อดุลย์ หาญวังม่วง
มติ ห่อประทุม
พิเชษฐ ลิ้มสุวรรณ
อาภาภรณ์ สกุลการะเวก
พิศาล สุขวิสูตร
King Mongkut's Institute of Technology. School of Science
King Mongkut's Institute of Technology Ladkrabang. College of Advanced Manufacturing Innovation
Rajabhat Rajanagarindra University. Faculty of Science
Huachiew Chalermprakiet University. Faculty of Science and Technology. Division of Physical Science
Rajamangala University of Technology Suvarnabhum. Faculty of Science and Technology
National Electronics and Computer Technology Center. Opto-Electrochemical Sensing Research Team
King Mongkut's Institute of Technology Ladkrabang. School of Science
King Mongkut's Institute of Technology Ladkrabang. School of Science
King Mongkut's Institute of Technology Ladkrabang. School of Science
Keywords: แอนติโมนีเทลลูไรด์
Antimony telluride
ฟิล์มหนา
Thick films
แมกนีตรอนสปัตเตอริง
Magnetron sputtering
ฟังก์ชันนัลความหนาแน่น
Density functionals
Issue Date: 2021
Citation: Current Applied Physics 31, (November 2021) : 7-15
Abstract: Thick Cu-doped Sb2Te3 films were deposited on flexible substrate by DC magnetron sputtering from a mosaic Cu–Sb2Te3 target. The Cu-doped Sb2Te3 films were vacuum annealed to improve their thermoelectric properties. Density functional theory was used to clarify the internal mechanism of the Cu doped into the Sb2Te3 system. The results showed that Cu substitution on a Sb site induced electronic states or impurity peaks of Sb2Te3 at a valence band maximum. The carrier concentration of the Cu-doped Sb2Te3 films increased as the Cu-doped concentration increased. However, the crystallite size and Seebeck coefficient of the Cu-doped Sb2Te3 films decreased as the Cu-doped concentration increased. Post-annealing treatment improved the microstructure and thermoelectric properties of the Cu-doped Sb2Te3 films. The maximum electrical conductivity and power factor values of 754.20 S/cm at 50 °C and 1.56 10−3 W/mK2 at 100 °C were obtained in the annealed film with a Cu-doped concentration of 3 at%.
Description: สามารถเข้าถึงบทความฉบับเต็มได้ที่ https://doi.org/10.1016/j.cap.2021.07.011
URI: https://has.hcu.ac.th/jspui/handle/123456789/2054
Appears in Collections:Science and Technology - Artical Journals

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