Please use this identifier to cite or link to this item: https://has.hcu.ac.th/jspui/handle/123456789/1841
Title: Pressure‐Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation
Authors: Prayoonsak Pluengphon
Pornsiri Wanarattikan
Thiti Bovornratanaraks
Burapat Inceesungvorn
ประยูรศักดิ์ เปลื้องผล
พรสิริ วนรัฐิกาล
ธิติ บวรรัตนารักษ์
บูรภัทร์ อินทรีย์สังวร
Huachiew Chalermprakiet University. Faculty of Science and Technology
Huachiew Chalermprakiet University. Faculty of Science and Technology
Chulalongkorn University. Faculty of Science
Chiang Mai University. Faculty of Science
Keywords: การเรียงอิเลกตรอน
Electronic structure
ควอเทอร์นารี่อัลลอย
Quaternaryalloy
Structural stability
Issue Date: 2019
Citation: ChemistryOpen 8,3 (March 2019) : 393-398
Abstract: We present the effects of In−N distribution and high pressure on the zincblende phase (0–5 GPa) of InxGa1−xAs0.963N0.037 (x=0.074, 0.111 and 0.148). Structural, electronic, and optical properties are analyzed, and it is found that non-isotropic distribution of In−N (type C) possesses the minimum free energy for the InGaAsN conventional cell system. An increasing indium content reduces the formation enthalpy of InGaAsN. The formation enthalpy, conduction band minimum, strength of covalent bonds, and electron density differences in free space of InGaAsN are decreased under high-pressure conditions. The dielectric performance and static permittivity of InGaAsN are lower than that of GaAs, for which the dielectric performance transforms to conductor performance at high frequency. The optimum photoabsorption coefficient is found at the composition of In0.111Ga0.889As0.963N0.037 (3In−N), which very well relates to the literature.
Description: สามารถเข้าถึงบทความฉบับเต็มได้ที่ https://chemistry-europe.onlinelibrary.wiley.com/doi/10.1002/open.201900018
URI: https://has.hcu.ac.th/jspui/handle/123456789/1841
Appears in Collections:Science and Technology - Artical Journals

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