1. Huachiew Chalermprakiet University
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Please use this identifier to cite or link to this item: https://has.hcu.ac.th/jspui/handle/123456789/3911
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dc.contributor.authorSupasak Kianwimol-
dc.contributor.authorPornsiri Wanarattikan-
dc.contributor.authorRachsak Sakdanuphab-
dc.contributor.authorPrayoonsak Pluengphon-
dc.contributor.authorThiti Bovornratanaraks-
dc.contributor.authorAparporn Sakulkalavek-
dc.contributor.authorพรสิริ วนรัฐิกาล-
dc.contributor.authorราชศักดิ์ ศักดานุภาพ-
dc.contributor.authorประยูรศักดิ์ เปลื้องผล-
dc.contributor.authorธิติ บวรรัตนารักษ์-
dc.contributor.authorอาภาภรณ์ สกุลการะเวก-
dc.contributor.otherKing Mongkut’s Institute of Technology Ladkrabang. Faculty of Scienceen
dc.contributor.otherHuachiew Chalermprakiet University. Faculty of Science and Technologyen
dc.contributor.otherKing Mongkut’s Institute of Technology Ladkrabang. College of Advanced Manufacturing Innovationen
dc.contributor.otherHuachiew Chalermprakiet University. Faculty of Science and Technologyen
dc.contributor.otherFaculty of Science, Chulalongkorn Universityen
dc.contributor.otherThailand Center of Excellence in Physics. Commission on Higher Educationen
dc.date.accessioned2025-05-29T12:59:03Z-
dc.date.available2025-05-29T12:59:03Z-
dc.date.issued2019-
dc.identifier.citationJ. Electron. Mater. 48, 3490–3496 (2019)en
dc.identifier.otherhttps://doi.org/10.1007/s11664-019-07100-1-
dc.identifier.urihttps://has.hcu.ac.th/jspui/handle/123456789/3911-
dc.descriptionสามารถเข้าถึงบทความฉบับเต็ม (Full text) ได้ที่ : https://link.springer.com/article/10.1007/s11664-019-07100-1en
dc.description.abstractBismuth telluride (Bi2Te3) thin films have been deposited onto polyimide sheet substrates by direct-current (DC) magnetron sputtering at different powers and their microstructure, composition, and electrical and thermoelectrical properties studied. The experimental results indicated that the sputtering power was the key parameter determining their thermoelectric properties. X-ray diffraction analysis confirmed the highly (015) preferred orientation of the films. The Te content and grain size depended on the sputtering power. The power factor of Bi2Te3 deposited by DC sputtering at power of 60 W was comparable to that obtained for highly (00l) Bi2Te3 thin film.en
dc.language.isoen_USen
dc.subjectThin filmsen
dc.subjectฟิล์มบางen
dc.subjectBismuth tellurideen
dc.subjectบิสมัทเทลลูไรด์en
dc.subjectMagnetron sputteringen
dc.subjectแมกนีตรอนสปัตเตอริงen
dc.subjectSputtering (Physics)en
dc.subjectสปัตเตอริง (ฟิสิกส์)en
dc.titleExperimental Study on Flexible Bismuth Telluride Thin Films Deposited by DC Sputtering at Different Powersen
dc.typeArticleen
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