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https://has.hcu.ac.th/xmlui/handle/123456789/5851| Title: | Electrodeposition growth of multiphase metal telluride thin films: Structural, optical, electrical properties, and DFT calculations |
| Authors: | Panupat Chaiworn Pensri Pramukkul Prayoonsak Pluengphon Ekasiddh Wongrat Phathaitep Raksa Piyanooch Nedkun Auttasit Tubtimtae ภาณุพัฒน์ ชัยวร เพ็ญศรี ประมุขกุล ประยูรศักดิ์ เปลื้องผล เอกสิทธิ์ วงศ์ราษฎร์ ผไทเทพ รักษา ปิยนุช เนตรคุณ อัฐสิษฐ์ ทับทิมแท้ Chiang Mai Rajabhat University. Department of Physics and General Science Chiang Mai Rajabhat University. Department of Physics and General Science Huachiew Chalermprakiet University. Faculty of Science and Technology University of Phayao. School of Science Rajamangala University of Technology Isan. Faculty of Science and Liberal Arts Kasetsart University Chalermphrakiet Sakon Nakhon Province Campus. Faculty of Science and Engineering Kasetsart University Kamphaeng Saen Campus. Faculty of Liberal Arts and Science |
| Keywords: | Electrodeposition การชุบโลหะด้วยไฟฟ้า Electroplating การชุบเคลือบผิวด้วยไฟฟ้า Photo absorption coefficient สัมประสิทธิ์การดูดกลืนแสง Metal telluride thin films ฟิล์มบางโลหะเทลลูไรด์ Thin films ฟิล์มบาง Semiconductor การเติมสารกึ่งตัวนำ Dopping พลวง Antimony อะลูมิเนียม Aluminum อะลูมินัม วิทยาศาสตร์และเทคโนโลยี |
| Issue Date: | 2026 |
| Citation: | Materials Chemistry and Physics 362,15 August 2026, 132752 |
| Abstract: | This study investigated the effects of applied electrodeposition potentials on the structural, optical, and electrical properties of multiphase metal telluride thin films for optoelectronic applications. The rhombohedral Sb2Te3, Bi2Te3, Al7Te10, and Bi4Te3 phases were identified and incorporated into thin films containing hexagonal Bi2Te, BiTe, and monoclinic Al2Te3. Variations in the crystallographic parameters are attributed to recrystallization and phase transformation processes driven by the energy stored in the parent Bi2Te3 phase. Scanning electron microscopy (SEM) images showed a compact inner surface covered with residuals dispersed across the film surface at the applied potentials of 4 and 6 V. At an applied potential of 8 V, crack formation accompanied by a reduction in surface residuals was observed, whereas films deposited at 10 V exhibited more pronounced cracking with no noticeable residuals. Energy-dispersive X-ray spectroscopy (EDS) confirmed the presence of Al, Sb, Te, and Bi in all the deposited films, indicating the successful incorporation of binary multiphase metal chalcogenide compounds. The band gaps of the deposited films are decreased with increasing electrodeposition potential, highlighting the tunability of the electronic properties of multiphase metal telluride thin films. A significant decline in the activation energy (Eac) was observed between 6 and 8 V, suggesting that this range is the optimal applied voltage window for device applications due to enhanced thermally activated conduction. Finally, density functional theory (DFT) calculations of the photo absorption coefficient indicated that Bi2Te3 and Sb2Te3 exhibited higher absorption coefficients than Al2Te3 and Al7Te10. Among these materials, Bi2Te3 exhibited the strongest absorption coefficient at higher photon energies, whereas the other phases exhibited enhanced absorption in the red-light region. |
| Description: | สามารถเข้าถึงบทความฉบับเต็ม (Full Text) ได้ที่ : https://www.sciencedirect.com/science/article/abs/pii/S0254058426007455 |
| URI: | https://has.hcu.ac.th/xmlui/handle/123456789/5851 |
| �蝷箔����: | Science and Technology - Articles Journals |
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| Electrodeposition-growth-of-multiphase-metal-telluride-thin-films.pdf | 11.21 MB | Adobe PDF | ![]() 璉�閫�/撘�� |
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