Please use this identifier to cite or link to this item: https://has.hcu.ac.th/xmlui/handle/123456789/5851
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dc.contributor.authorPanupat Chaiworn-
dc.contributor.authorPensri Pramukkul-
dc.contributor.authorPrayoonsak Pluengphon-
dc.contributor.authorEkasiddh Wongrat-
dc.contributor.authorPhathaitep Raksa-
dc.contributor.authorPiyanooch Nedkun-
dc.contributor.authorAuttasit Tubtimtae-
dc.contributor.authorภาณุพัฒน์ ชัยวร-
dc.contributor.authorเพ็ญศรี ประมุขกุล-
dc.contributor.authorประยูรศักดิ์ เปลื้องผล-
dc.contributor.authorเอกสิทธิ์ วงศ์ราษฎร์-
dc.contributor.authorผไทเทพ รักษา-
dc.contributor.authorปิยนุช เนตรคุณ-
dc.contributor.authorอัฐสิษฐ์ ทับทิมแท้-
dc.contributor.otherChiang Mai Rajabhat University. Department of Physics and General Scienceen_US
dc.contributor.otherChiang Mai Rajabhat University. Department of Physics and General Scienceen_US
dc.contributor.otherHuachiew Chalermprakiet University. Faculty of Science and Technologyen_US
dc.contributor.otherUniversity of Phayao. School of Scienceen_US
dc.contributor.otherRajamangala University of Technology Isan. Faculty of Science and Liberal Artsen_US
dc.contributor.otherKasetsart University Chalermphrakiet Sakon Nakhon Province Campus. Faculty of Science and Engineeringen_US
dc.contributor.otherKasetsart University Kamphaeng Saen Campus. Faculty of Liberal Arts and Scienceen_US
dc.date.accessioned2026-07-18T13:35:15Z-
dc.date.available2026-07-18T13:35:15Z-
dc.date.issued2026-
dc.identifier.citationMaterials Chemistry and Physics 362,15 August 2026, 132752en_US
dc.identifier.otherhttps://doi.org/10.1016/j.matchemphys.2026.132752-
dc.identifier.urihttps://has.hcu.ac.th/xmlui/handle/123456789/5851-
dc.descriptionสามารถเข้าถึงบทความฉบับเต็ม (Full Text) ได้ที่ : https://www.sciencedirect.com/science/article/abs/pii/S0254058426007455en_US
dc.description.abstractThis study investigated the effects of applied electrodeposition potentials on the structural, optical, and electrical properties of multiphase metal telluride thin films for optoelectronic applications. The rhombohedral Sb2Te3, Bi2Te3, Al7Te10, and Bi4Te3 phases were identified and incorporated into thin films containing hexagonal Bi2Te, BiTe, and monoclinic Al2Te3. Variations in the crystallographic parameters are attributed to recrystallization and phase transformation processes driven by the energy stored in the parent Bi2Te3 phase. Scanning electron microscopy (SEM) images showed a compact inner surface covered with residuals dispersed across the film surface at the applied potentials of 4 and 6 V. At an applied potential of 8 V, crack formation accompanied by a reduction in surface residuals was observed, whereas films deposited at 10 V exhibited more pronounced cracking with no noticeable residuals. Energy-dispersive X-ray spectroscopy (EDS) confirmed the presence of Al, Sb, Te, and Bi in all the deposited films, indicating the successful incorporation of binary multiphase metal chalcogenide compounds. The band gaps of the deposited films are decreased with increasing electrodeposition potential, highlighting the tunability of the electronic properties of multiphase metal telluride thin films. A significant decline in the activation energy (Eac) was observed between 6 and 8 V, suggesting that this range is the optimal applied voltage window for device applications due to enhanced thermally activated conduction. Finally, density functional theory (DFT) calculations of the photo absorption coefficient indicated that Bi2Te3 and Sb2Te3 exhibited higher absorption coefficients than Al2Te3 and Al7Te10. Among these materials, Bi2Te3 exhibited the strongest absorption coefficient at higher photon energies, whereas the other phases exhibited enhanced absorption in the red-light region.en_US
dc.language.isoen_USen_US
dc.subjectElectrodepositionen_US
dc.subjectการชุบโลหะด้วยไฟฟ้าen_US
dc.subjectElectroplatingen_US
dc.subjectการชุบเคลือบผิวด้วยไฟฟ้าen_US
dc.subjectPhoto absorption coefficienten_US
dc.subjectสัมประสิทธิ์การดูดกลืนแสงen_US
dc.subjectMetal telluride thin filmsen_US
dc.subjectฟิล์มบางโลหะเทลลูไรด์en_US
dc.subjectThin filmsen_US
dc.subjectฟิล์มบางen_US
dc.subjectSemiconductoren_US
dc.subjectการเติมสารกึ่งตัวนำen_US
dc.subjectDoppingen_US
dc.subjectพลวงen_US
dc.subjectAntimonyen_US
dc.subjectอะลูมิเนียมen_US
dc.subjectAluminumen_US
dc.subjectอะลูมินัมen_US
dc.subjectวิทยาศาสตร์และเทคโนโลยีen_US
dc.titleElectrodeposition growth of multiphase metal telluride thin films: Structural, optical, electrical properties, and DFT calculationsen_US
dc.typeArticleen_US
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