Please use this identifier to cite or link to this item: https://has.hcu.ac.th/xmlui/handle/123456789/5851
Title: Electrodeposition growth of multiphase metal telluride thin films: Structural, optical, electrical properties, and DFT calculations
Authors: Panupat Chaiworn
Pensri Pramukkul
Prayoonsak Pluengphon
Ekasiddh Wongrat
Phathaitep Raksa
Piyanooch Nedkun
Auttasit Tubtimtae
ภาณุพัฒน์ ชัยวร
เพ็ญศรี ประมุขกุล
ประยูรศักดิ์ เปลื้องผล
เอกสิทธิ์ วงศ์ราษฎร์
ผไทเทพ รักษา
ปิยนุช เนตรคุณ
อัฐสิษฐ์ ทับทิมแท้
Chiang Mai Rajabhat University. Department of Physics and General Science
Chiang Mai Rajabhat University. Department of Physics and General Science
Huachiew Chalermprakiet University. Faculty of Science and Technology
University of Phayao. School of Science
Rajamangala University of Technology Isan. Faculty of Science and Liberal Arts
Kasetsart University Chalermphrakiet Sakon Nakhon Province Campus. Faculty of Science and Engineering
Kasetsart University Kamphaeng Saen Campus. Faculty of Liberal Arts and Science
Keywords: Electrodeposition
การชุบโลหะด้วยไฟฟ้า
Electroplating
การชุบเคลือบผิวด้วยไฟฟ้า
Photo absorption coefficient
สัมประสิทธิ์การดูดกลืนแสง
Metal telluride thin films
ฟิล์มบางโลหะเทลลูไรด์
Thin films
ฟิล์มบาง
Semiconductor
การเติมสารกึ่งตัวนำ
Dopping
พลวง
Antimony
อะลูมิเนียม
Aluminum
อะลูมินัม
วิทยาศาสตร์และเทคโนโลยี
Issue Date: 2026
Citation: Materials Chemistry and Physics 362,15 August 2026, 132752
Abstract: This study investigated the effects of applied electrodeposition potentials on the structural, optical, and electrical properties of multiphase metal telluride thin films for optoelectronic applications. The rhombohedral Sb2Te3, Bi2Te3, Al7Te10, and Bi4Te3 phases were identified and incorporated into thin films containing hexagonal Bi2Te, BiTe, and monoclinic Al2Te3. Variations in the crystallographic parameters are attributed to recrystallization and phase transformation processes driven by the energy stored in the parent Bi2Te3 phase. Scanning electron microscopy (SEM) images showed a compact inner surface covered with residuals dispersed across the film surface at the applied potentials of 4 and 6 V. At an applied potential of 8 V, crack formation accompanied by a reduction in surface residuals was observed, whereas films deposited at 10 V exhibited more pronounced cracking with no noticeable residuals. Energy-dispersive X-ray spectroscopy (EDS) confirmed the presence of Al, Sb, Te, and Bi in all the deposited films, indicating the successful incorporation of binary multiphase metal chalcogenide compounds. The band gaps of the deposited films are decreased with increasing electrodeposition potential, highlighting the tunability of the electronic properties of multiphase metal telluride thin films. A significant decline in the activation energy (Eac) was observed between 6 and 8 V, suggesting that this range is the optimal applied voltage window for device applications due to enhanced thermally activated conduction. Finally, density functional theory (DFT) calculations of the photo absorption coefficient indicated that Bi2Te3 and Sb2Te3 exhibited higher absorption coefficients than Al2Te3 and Al7Te10. Among these materials, Bi2Te3 exhibited the strongest absorption coefficient at higher photon energies, whereas the other phases exhibited enhanced absorption in the red-light region.
Description: สามารถเข้าถึงบทความฉบับเต็ม (Full Text) ได้ที่ : https://www.sciencedirect.com/science/article/abs/pii/S0254058426007455
URI: https://has.hcu.ac.th/xmlui/handle/123456789/5851
Appears in Collections:Science and Technology - Articles Journals

Files in This Item:
File Description SizeFormat 
Electrodeposition-growth-of-multiphase-metal-telluride-thin-films.pdf11.21 MBAdobe PDFThumbnail
View/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.