Abstract:
Bi2Te3 thin films were deposited onto polyamide sheets with direct current (DC) or radio frequency (RF) magnetron sputtering techniques. The films were prepared using a Bi2Te3 target at a varying preheating temperature from 150 to 350 ° C. It was observed that the type of plasma excitation and pre-heating temperature can significantly change the composition, preferred orientation, crystallinity, and thermoelectric properties of the films. The pre-heat treatment significantly affected the non-stoichiometric composition. In addition, it was shown that crystallinity and (0 0 l) planes were enhanced in the DC sputtered coatings at a high pre-heating temperature. The maximum power factor of 3.5 10-3 W/m K2 at 285 °C was obtained for the films deposited using DC magnetron sputtering and a preheating temperature of 350 °C. The carrier concentration and mobility of the film were 5.40 1020 cm-3 and 13.04 cm2 /V s, respectively. Compared with an ordinary Bi2Te3 film, the power factor of such film has been greatly increased. The results indicated that DC magnetron sputtering can enhance the (0 0/) plane orientation in the Bi2Te3 film.
